Perovskite photo voltaic dell with TMO Buffer Layers hits 15.7% effectivity

Researchers in Italy have used protecting buffer layers in perovskite photo voltaic cells to mitigate harm through the sputtering of indium tin oxide within the manufacturing course of. They declare the buffer layers had been in a position to fulfill this mission with out impairing the cell’s common seen transmittance.

October 30, 2023 Emiliano Bellini

Schematic of the photo voltaic cell

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Schematic of the photo voltaic cell

Picture: College of Rome Tor Vergata, ACS Publications, Artistic Commons License CC BY 4.0

A gaggle of researchers led by the University of Rome Tor Vergata has designed a perovskite photo voltaic cell for purposes in tandem with PV gadgets.

As talked about in a lately revealed tutorial article, the cell makes use of buffer layers fabricated from transition metallic oxides (TMOs) supposed to guard the cell through the sputtering of indium tin oxide (ITO) within the cell manufacturing course of.

The scientists examined, specifically, two totally different evaporated transition metallic oxides (TMOs) – molybdenum oxide (MoO_x) and vanadium oxide (V₂O_x) – and located the previous supplied one of the best efficiency.

The buffer layer was examined in a cell constructed with a substrate fabricated from glass and fluorine-doped tin oxide (FTO), an electron transport layer (ETL) based mostly on carbon–titanium dioxide (C/TiO2) and a photocatalyst containing mesoporous titanium dioxide (m-TiO2). It additionally featured a perovskite absorber, a gap transport layer (HTL) fabricated from poly-triarylamine (PTAA) and an indium tin oxide (ITO) electrode.

Via a collection of exams, the analysis crew discovered that the ITO sputtering impacts the PTAA layer and its interfaces with the perovskite absorber and the ITO electrode, respectively.

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The ITO deposition course of was optimized, balancing the UV plasma impact and the ion bombardment impact, and full suppression of sputtering harm was achieved with the introduction of an evaporated TMO atop the PTAA layer,” the lecturers mentioned within the paper. “The usage of ultrathin protecting buffer layers (2.5 nm for V₂O_x or 7.5 nm for MoO_x) successfully mitigated the sputtering harm results.”

The cell fabricated with the V₂O_x buffer layer achieved an effectivity of 15.65% and that based mostly on MoO_x reached 16.44%.

“We efficiently demonstrated that the protecting buffer layer is efficient at suppressing the sputtering harm additionally in thinner perovskite-based perovskite photo voltaic cells for BIPV utility, with out impairing the typical seen transmittance (AVT),” the paper mentioned.

The cell design is launched within the paper “Semitransparent Perovskite Solar Cells with Ultrathin Protective Buffer Layers,” revealed in ACS Publications.

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